In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 740-742 ( 2013-1), p. 485-489
Kurzfassung:
The near-SiC-interfaces of annealed Ni/SiC contacts were observed directly by high-resolution transmission electron microscopy (HRTEM). 1 nm native oxide layer was observed in the as-deposited contact interface. The native oxide layer cannot be removed at 650°C through rapid thermal annealing (RTA) and it was completely removed at 1000°C RTA. The residue of native oxide layer resulted in the Schottky characters. High temperature annealing ( 〉 950°C) not only removes the oxide layer in the near-SiC-interface, but also forms a well arranged flat Ni2Si/SiC interface, which contribute to the formation of ohmic behavior.
Materialart:
Online-Ressource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.740-742
DOI:
10.4028/www.scientific.net/MSF.740-742.485
Sprache:
Unbekannt
Verlag:
Trans Tech Publications, Ltd.
Publikationsdatum:
2013
ZDB Id:
2047372-2