In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 852 ( 2016-4), p. 1080-1086
Abstract:
Lutetium oxyorthosilicate (Lu 2 SiO 5 , LSO) doped with Pr 3+ was synthesized on cleaned silicon (111) substrates by sol-gel route with the spin-coating technique. XRD patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO occurred at 1100 °C. SEM observations revealed that the surface of the films was smooth, homogeneous and crack-free. When the sintering temperature was 1000 °C, the average grain size of the crystal particles was 100-200 nm and the thickness of the thin film was about 380 nm when the coating layer number up to 10. While the sintering temperature was 1100 °C, the average grain size of the crystal particles was 200-300 nm and the thickness of the thin film was about 320 nm also 10 layers. PL spectra showed when under 1000 °C, the quenching concentration of Pr 3+ was 0.3 mol%, the characteristic emission peaks was 289 nm and 340 nm and the dominant decay time was 4.64 ns; while under 1100 °C, the quenching concentration of Pr 3+ was 0.4 mol%, the characteristic emission peaks was 280 nm and 320 nm and the dominant decay time was 2.61 ns.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.852
DOI:
10.4028/www.scientific.net/MSF.852.1080
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2016
detail.hit.zdb_id:
2047372-2