In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 858 ( 2016-5), p. 177-180
Abstract:
Optimized design of Silicon Carbide (SiC) power devices depends, besides power device physics, also on consideration of basic properties and technological readiness of the material. This paper presents a novel analysis of the dependence of variation of epitaxial doping and thickness on the determination of the optimum design point of SiC devices. We introduce electric field at epitaxy-substrate interface as a useful parameter in controlling the dependence of device parameters on epitaxy. Using this method as criterion for design can improve the robustness of SiC devices to epitaxial variation and hence the process yield.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.858
DOI:
10.4028/www.scientific.net/MSF.858.177
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2016
detail.hit.zdb_id:
2047372-2