In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 897 ( 2017-5), p. 719-722
Abstract:
This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger–Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current–voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.897
DOI:
10.4028/www.scientific.net/MSF.897.719
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2017
detail.hit.zdb_id:
2047372-2
