In:
Solid State Phenomena, Trans Tech Publications, Ltd., Vol. 156-158 ( 2009-10), p. 331-336
Abstract:
The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. The results were correlated to defects in the 3C-SiC, which were studied and quantified by conductive atomic force microscopy (C-AFM). A method based on C-AFM was introduced that enables current-voltage characterization of diodes of contact radius down to 5 µm, which consequently allows the extraction of diode parameters for Schottky diodes of very small contact area.
Type of Medium:
Online Resource
ISSN:
1662-9779
DOI:
10.4028/www.scientific.net/SSP.156-158
DOI:
10.4028/www.scientific.net/SSP.156-158.331
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2009
detail.hit.zdb_id:
2051138-3