In:
Solid State Phenomena, Trans Tech Publications, Ltd., Vol. 195 ( 2012-12), p. 310-313
Abstract:
Aluminum oxide (AlO x ) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlO x films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p + -emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiO x ), which is usually observed during deposition of AlO x on Silicon, strongly impacts the silicon/AlO x interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlO x / a -SiN x :H stacks by the plasma enhanced chemical vapor deposition (PECVD).
Type of Medium:
Online Resource
ISSN:
1662-9779
DOI:
10.4028/www.scientific.net/SSP.195
DOI:
10.4028/www.scientific.net/SSP.195.310
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2012
detail.hit.zdb_id:
2051138-3