In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 33, No. 9 ( 1984), p. 1240-
Kurzfassung:
AES and RHEED techniques have been applied to a study of temperature dependence of the sticking coefficient of In atoms on the Si(lll)4×1-In surface. At temperatures below 110℃, the sticking coefficient for In atoms is close to zero due to saturation of valence bonds resulting from the arrangement of In atoms in the 4×1-In overlayer. The steep change of the sticking coefficient in the temperature range 110-120℃ may be explained by a model of the order-disorder transition arisen from the surface melting. At temperatures above 120℃, the sticking coefficient of In atoms is always close to unity.
Materialart:
Online-Ressource
ISSN:
1000-3290
,
1000-3290
Sprache:
Unbekannt
Verlag:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publikationsdatum:
1984