In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 33, No. 12 ( 1984), p. 1733-
Kurzfassung:
The concentration profiles of high-dose implanted N+ (5×1017 atom/cm2, 100 keV) in iron foils (about 4000? thick) and iron bulk sample (industrial purity) were measured by E. B. S. via α-particle of energy in order of MeV. A dip was found in backscat-tering spectrum of the substrate, as a result of the high-dose impurity, implantation a method was developed to calculate the concentration profile of impurity based on the dip.
Materialart:
Online-Ressource
ISSN:
1000-3290
,
1000-3290
Sprache:
Unbekannt
Verlag:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publikationsdatum:
1984
