In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 38, No. 4 ( 1989), p. 573-
Abstract:
Technological conditions and basic photoele tronic properties of a-GeNx and a-GeNx:H films prepared by an rf-reactive sputtering method are reported. The IR and Raman specrta are presented. The effects of N content on ΔE and IR and Raman spectra of a-GeNx:H film are also discussed.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1989
