In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 44, No. 11 ( 1995), p. 1861-
Abstract:
The epitaxial growth of metastable fcc Mn thin films on GaAs(001) surface has been achieved at a substrate temperature of 400K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electron density of states below the Fermi edge of the fcc Mn phase is measured A significant difference of the electronic structures is observed between the metastable fcc Mn phase and the thermodynamically stable α-Mn phase. Possible mechanisms are proposed to interprete the experimental result.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1995