In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 46, No. 5 ( 1997), p. 1011-
Abstract:
The structures of Au/Si-rich SiO2/p-Si and Au/Si-rich SiO2/n+-Si have been fabricated and their electroluminescence characteristics have comparatively been studied. For the Au/Si-rich SiO2/p-Si structure, when the forward bias is more than 4V, red light is emitted, while under the reverse bias, no light is observed. For Au/Si-rich SiO2/n+-Si structure, it does not emit light under the forward bias, but it emits red light when the reverse bias is greater than 3.5V. The mechanism for electroluminescence from the Au/Si-rich SiO2/n+-Si structure is disscussed.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1997