In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 48, No. 3 ( 1999), p. 550-
Abstract:
Plasma etching(PE) of cubic β-SiC single crystalline thin films produced via chemical vapor deposition(CVD) has been performed in SF6 and the SF6+O2 mixtures. Experimental results show that the maxima of etching rate are reached when gas mixing ratio is about 40%. The Auger energy spectra indicate that PE process in SF6 and the SF6+O2 mixtures does not yield a residual SiC with a C-rich surface. This technique and experimental results may serve as the foundation of fabricating various devices of SiC.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1999