In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 52, No. 9 ( 2003), p. 2235-
Kurzfassung:
Mechanism of irradiation effects is analyzed for floating gate read only memorie s (ROMs). Phenomena in experiments are reasonably explained. It is proposed that failures in devices result from oxide trapped charge and interface trapped char ge generated by radiation in memory cells and peripheral circuitry. The neutron, proton and 60Co γ irradiation effects in FLASH ROM and EEPROM a re total dose effects.
Materialart:
Online-Ressource
ISSN:
1000-3290
,
1000-3290
Sprache:
Unbekannt
Verlag:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publikationsdatum:
2003
