In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 52, No. 11 ( 2003), p. 2912-
Abstract:
In this paper, we calculate the relationships both between the width of the tunnel barrier and the spin-polarization(SP) of the electronic current when it is injected from a ferromagnetic metal into a semiconductor through a tunnel barrier and between the bias and SP. The results agree with the latest experimental results. We found that a moderate bias and tunnel barrier width allow a giant SP and there is little spin injection at very low bias.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2003