In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 1 ( 2011), p. 017803-
Abstract:
The ambipolar diffusion coefficient of (110) GaAs/AlGaAs multiple quantum wells was measured by the transient spin grating technique.The ambipolar diffusion coefficient and carrier life time,which are Da=13.0 cm2/s and τR=1.9 ns,were obtained directly by this technique under carrier concentration nex=3.4×1010/cm2 at room temperature.The measured Da keeps almost a constant value when the photoexcited carrier concentration is increased up to 1.2×1011/cm2.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.60.017803
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2011