In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 2 ( 2011), p. 028502-
Abstract:
Devices of single poly electrically ersable programmable read only memory (EEPROM) and silicon-oxide-nitride-oxide-silicon (SONOS) EEPROM on silicon on insulator (SOI) are fabricated on self-built 0.8 μm SOI process. And through a set of experiments on EEPROMs of these configurations and comparisons, SOI SONOS EEPROM is successfully developed with good and stable total dose radiation hardened characteristics. These provide stronger proofs to choose EEPROM in radiation hardened circuits.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.60.028502
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2011