In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 60, No. 9 ( 2011), p. 098502-
Abstract:
Threshold voltage drift is one of the most important characteristics of device degradation. Based on the research of threshold drifts of the front and the back gate of SOI SONOS EEPROM, device degradation is studied in irradiation environment. Physical mechanism of threshold drifts is analyzed through physical band and mobile carrier analysis. And measures to improve device performance are proposed.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.60.098502
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2011