In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 61, No. 13 ( 2012), p. 138401-
Abstract:
Improving the light-soaking stability of silicon-based thin film solar cells is a very important issue for industrial production. In order to obtain high-efficiency a-Si:H/μc-Si:H tandem solar cells with good light-soaking stability, In this paper we first present the results about a-Si:H top solar cell with high light-soaking stability. Then we mainly investigate the influences of N/P tunnel junction and silane concentration (SC) profiling of μc-Si:H i-layer on the light-soaking stability of a-Si:H/μc-Si:H tandem solar cells. Up to now we have been able to obtain a-Si:H/μc-Si:H tandem solar cell with a light-soaking degradation ratio of only 7%.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.61.138401
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2012