In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 62, No. 8 ( 2013), p. 086101-
Abstract:
Growth behaviors of InxGa1-xN (x ≤ 0.2) materials by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated in detail. A precise control of the incorporation of indium into InxGa1-xN at a growth temperature of 580 ℃ is realized. The In0.19Ga0.81N shows a very narrow width of 587 arcsec for the (10.2) asymmetrical reflection from high-resolution X-ray diffraction and the background electronic concentration is 3.96× 1018 cm3. In the region of metal-rich growth, no negligible indium incorporation is observed even if the Ga beam flux is much larger than the equivalent N flux. This growth behavior might be ascribed to an incomplete Ga incorporation during InGaN growth. In addition, a slight increase of In flux results in crystalline quality degradation of InGaN epilayers.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.62.086101
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2013
