In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 62, No. 21 ( 2013), p. 218801-
Kurzfassung:
The GaInAs/GaNAs super-lattice with a feature of space separation of In and N constituents as an active region, is one of the most important ways to achieve 1 eV GaInNAs-based solar cells. To experimentally realize the high-quality super-lattice structure with the required band-gap, Kronig-Penney model is used to obtain the barrier thickness dependence on the well thickness and its composition. Meanwhile, the strain state of GaInAs/GaNAs SLs with various well choices is also discussed. Results show that when both the GaNAs and GaInAs act as the well layers the super-lattice can achieve 1 eV band-gap, and when the GaN0.04As0.96 is considered to act as the well layer, the entire GaInAs/GaNAs SLs have smaller strain accumulations as compared with the case of Ga0.7In0.3As as the well layer in the super-lattice structure.
Materialart:
Online-Ressource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.62.218801
Sprache:
Unbekannt
Verlag:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publikationsdatum:
2013
