In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 63, No. 10 ( 2014), p. 104216-
Abstract:
A gated operation dynamic bias control strategy of InGaAs single-photon avalanche diode (SPAD) and circuit implementation are proposed based on the research of the SPAD performances. By the gated operation active quenching method the quenching time can be lowered, also dark count and afterpulsing effect are inhibited. The circuit fabricated by standard complementary metal oxide semiconductor (CMOS) technology and SPAD fabricated by non-standard CMOS technology are interconnected through the indium column interconnection hybrid packaging process. In the low temperature (-30 ℃) test conditions, the avalanche current signal triggered by light is extracted and avalanche phenomenon is quickly quenched. Studies in this paper are the sensing resistance and critical sensing voltage effect on electrical performance of the detector and the implementation method of the detection circuit. The recovery time and transfer delay of the SPAD are 575 and 563 ps, respectively and the quenching time is 1.88 ns. These characteristics meet the requirements for the nanosecond precision sensor detection application.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.63.104216
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2014