In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 58, No. SC ( 2019-06-01), p. SCCD08-
Abstract:
Similarities and differences in the design of the interfaces between gate dielectrics and GaN-based semiconductors were systematically investigated with a focus on the thermal stability of the interlayers. Although the excellent electrical properties of a SiO 2 /GaN interface with a thin Ga-oxide interlayer (SiO 2 /GaO x /GaN) were deteriorated by high-temperature treatment at around 1000 °C, the thin oxide on the AlGaN surface (SiO 2 /GaO x /AlGaN) exhibited superior thermal stability and interface quality even after treatment at 1000 °C. Physical characterizations showed that thermal decomposition of the thin GaO x layer on the GaN surface is promoted by oxygen transfer, which produces volatile products, leading to remarkable roughening of the GaN surface. In contrast, decomposition of the thin GaO x layer was suppressed on the AlGaN surface under the high temperatures, preserving a smooth oxide surface. The mechanisms behind both the improved and degraded electrical properties in these GaN-based MOS structures are discussed on the basis of these findings.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/1347-4065/ab0ad2
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2019
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
