In:
Applied Physics Express, IOP Publishing, Vol. 9, No. 3 ( 2016-03-01), p. 034202-
Abstract:
Identical insulators and bottom electrodes were fabricated and capped by an indium tin oxide (ITO) film, either undoped or doped with erbium (Er), as a top electrode. This distinctive top electrode dramatically altered the resistive random access memory (RRAM) characteristics, for example, lowering the operation current and enlarging the memory window. In addition, the RESET voltage increased, whereas the SET voltage remained almost the same. A conduction model of Er-doped ITO is proposed through current–voltage ( I – V ) measurement and current fitting to explain the resistance switching mechanism of Er-doped ITO RRAM and is confirmed by material analysis and reliability tests.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.7567/APEX.9.034202
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
2417569-9
