In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 2R ( 2013-02-01), p. 021001-
Abstract:
A high-density radical source (HDRS) was developed by optimizing the antenna structure and introducing an external magnetic field to plasma. Nitrogen radical generation by the HDRS at a density of 2.3 ×10 12 atoms cm -3 , which was one order higher than that for the conventional radical source (CRS), was achieved. The HDRS- and CRS-assisted InGaN growth in molecular beam epitaxy (MBE) was carried out. For the HDRS case, a diffraction peak in the X-ray rocking curve of the grown InGaN films showed a narrower peak, which width below 600 arcsec even with a high growth rate of 1.4 µm/h for InGaN. MBE with the assistance of HDRS has a great potential in the growth of nitride films with a lower mosaicity and a higher growth rate.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.021001
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7