In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 3R ( 2013-03-01), p. 031301-
Abstract:
Microroughness at the surface and interface of SiO 2 thermally grown on an atomically flat Si terrace was investigated by atomic force microscopy. Although surface protuberances on SiO 2 increased in height during oxidation, their relative locations were preserved. Their positions were mostly determined in the initial stage of oxidation and their heights increased during the subsequent oxidation. It was also found that, at many positions, protuberances on the SiO 2 surface correspond to dimples at the interface and the dimples on the SiO 2 surface correspond to the protuberances on the Si/SiO 2 interface. With decreasing thickness, the thickness of the SiO 2 layer becomes two-dimensionally less uniform. The Weibull slope of the time-dependent dielectric breakdown lifetime decreased when the thermal SiO 2 films were grown on rougher Si substrates, which was attributed to film thickness nonuniformity. The SiO 2 film formed on well-defined Si wafers showed a higher microscopic thickness uniformity and higher long-term reliability.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.031301
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
