In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 4R ( 2013-04-01), p. 041101-
Abstract:
Unipolar resistive switching behaviors including bistable memory switching and monostable threshold switching were found in ZrO 2 thin films fabricated by a simple sol–gel method with the Ti/ZrO 2 /Pt structure. The multilevel resistive switching behaviors were also revealed by varying the compliance current from 9 to 38 mA. Physical mechanisms based on a conductive filament model were proposed to explain the resistive switching phenomena and the device breakdown. A figure of merit Z = ρ a /ρ f was defined as a criterion for evaluating OFF/ON resistance ratio, where ρ f and ρ a represent the resistivities of the conductive filament and the fracture region of the filament, respectively. The advantages such as unipolar resistive switching, multilevel resistive switching, good scalability, low operation voltage ( 〈 5 V), high OFF/ON resistance ratio ( 〉 10 3 ), nondestructive readout, long retention ( 〉 10 4 s), and simple fabrication method make the ZrO 2 -based resistive switching device a promising candidate for next-generation nonvolatile memory applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.041101
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
