In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 8S ( 2013-08-01), p. 08JH06-
Abstract:
We optimized p ++ -GaInN/n ++ -GaN tunnel junctions grown on conventional light-emitting diodes, corresponding to n–p–n structures. We investigated two dependences at the tunnel junctions, the InN mole fraction dependence and a doping dependence. The lowest voltage drop at the reverse-biased tunnel junction was 0.68 V at 20 mA with a 3 nm p ++ -Ga 0.8 In 0.2 N (Mg: 1×10 20 cm -3 )/30 nm n ++ -GaN (Si: 4×10 20 cm -3 ) structure. We then found that the Mg memory effect was reasonably suppressed by using the p ++ -GaInN instead of a p ++ -GaN. At the same time, the amount of Si doping in the following n ++ -GaN should be substantially high to overcome the Mg memory effect.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.08JH06
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
