In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 10R ( 2013-10-01), p. 108005-
Abstract:
A bias application in hard X-ray photoelectron spectroscopy can successfully elucidate the bias-dependent electronic structures in devices. To demonstrate the versatility of this method, we investigated a Ru/HfO 2 /SiO 2 /Si structure as a prototype and directly observed the bias-dependent electronic states while keeping the device structure intact.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.108005
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7