In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 11R ( 2013-11-01), p. 110203-
Kurzfassung:
Dynamic fluctuation in stress-induced leakage current – called “variable stress-induced leakage current” – in a gate oxide of a metal–oxide–semiconductor structure was investigated. Variable stress-induced leakage current is attributed to random telegraph noise, which is associated with the state-transition of a single defect. To analyze the mechanism of the state-transition, dependence of state-transition probabilities on gate current and on temperature were investigated. These dependences indicate that the state-transition mechanism is a defect-structure transition by charge collision.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.110203
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2013
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7