In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 8S2 ( 2016-08-01), p. 08PB03-
Kurzfassung:
The electron-trapping property of Hf oxides with a wide range of Si contents (0–64 at. %) is studied as a charge storage layer of a nonvolatile memory. The largest flatband voltage shift in the MOS capacitor is obtained at a Si content of ∼20 at. %, which corresponds to the formation of a metastable crystalline phase such as a tetragonal or orthorhombic phase. First-principles calculation reveals that metastable phases tend to have a formation energy of oxygen vacancy lower than that of stable monoclinic ones. A schematic picture of traps in crystalline Hf oxides is provided. The metastable phase is also demonstrated to have retention characteristics superior to other phases.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.08PB03
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2016
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7