In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 8S2 ( 2016-08-01), p. 08PC07-
Abstract:
The surface and interface roughnesses of SiO 2 films thermally grown on 4H-SiC were investigated by atomic force microscopy. The roughness increases with oxide thickness in the initial oxidation stage, and it saturates at a certain thickness. An increase in roughness reflects nonuniform thermal oxidation. In addition, the two-dimensional fluctuation of oxide film thickness becomes marked for the thin film. Furthermore, current density vs voltage characteristics were investigated using MOS capacitors with various oxide thicknesses. The dispersion of the leakage current was found to be related to the oxide surface and interface roughnesses. On the other hand, time-zero dielectric breakdown voltage showed no relation to the roughness.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.08PC07
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
