In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 8S2 ( 2016-08-01), p. 08PD03-
Kurzfassung:
We propose a method to predict the length dependency of the magnitude of degradation caused by negative bias temperature instability (NBTI) stress applied to a p-MOSFET. Threshold voltage degradation Δ V th varied according to the drain bias V d , during the measurement of drain current I d . The depletion length L dep into the channel was calculated based on a particular V d value and the channel doping concentration. L dep was used to extract the channel edge region length L edge , then the center channel region length L cen was obtained by subtracting L edge from the gate length L gate . We proposed an equation that uses L dep , L cen , L edge and degree of Δ V th variation to calculate Δ V th according to L gate while the p-MOSFET is under NBTI stress. Equation estimates of Δ V th at different L gate were similar to measurements.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.08PD03
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2016
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7