In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 10S ( 2016-10-01), p. 10TA15-
Abstract:
In the present work, we aim to achieve the preferred crystal orientation of chemical solution deposition (CSD)-derived BaTiO 3 films on ubiquitous Si wafers with the assistance of Ca 2 Nb 3 O 10 nanosheet (ns-CN) template layers. The ns-CN on platinized Si (Pt/Si) substrates aligned the BaTiO 3 (100) plane to the substrate surface, because of the favorable lattice matching of the ns-CN (001) plane. The CSD process in air required a high crystallization temperature of 900 °C for the preferred crystal orientation of BaTiO 3 (100) because of the BaCO 3 byproduct generated during the combustion reaction of the precursor gel. The processing in vacuum to remove CO 2 species enhanced the crystal orientation even at the crystallization temperature of 800 °C, although it can generate oxygen vacancies ( ) that cause distorted polarization behavior under an applied field higher than approximately 150 kV/cm. The relative dielectric constant (ε r ) of the (100)-oriented BaTiO 3 film on the ns-CN-supported Pt/Si substrate (ns-CN/Pt/Si) was generally larger than that of the randomly oriented film on Pt/Si, depending on the degree of crystal orientation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.10TA15
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
