In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 12 ( 2016-12-01), p. 125801-
Kurzfassung:
We investigated the physical stability of ZnInSnO thin films against hydrogen plasma using a plasma-enhanced chemical vapor deposition (PECVD) system. The transmittance and resistivity characteristics of the entire ZnInSnO films showed very little degradation after the hydrogen plasma treatment. However, the deposited films with a zinc content of ≤8.8 at. % [Zn/(In + Sn + Zn), at. %] showed some optical and electrical property degradation. Within this compositional range, the resistivity of the films treated with hydrogen plasma increased compared with that of the as-deposited films. For the film with a zinc content of 7.6 at. %, the transmittance decreased by 21% compared with that of the as-deposited ZnInSnO film (at a standard optical wavelength of 2000 nm). The figure of merit of the deposited ZnInSnO thin films with a zinc content of 〉 8.8 at. % was physically stable against hydrogen plasma. We found that the deposited ZnInSnO thin films with a zinc content above 8.8 at. % have high physical stability against hydrogen plasma.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.125801
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2016
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
