Format:
Online-Ressource
Content:
Abstract: Growth of AlScN high-electron-mobility transistor (HEMT) structures by metal–organic chemical vapor deposition (MOCVD) is challenging due to the low vapor pressure of the conventionally used precursor tris-cyclopentadienyl-scandium (Cp3Sc). It is shown that the electrical and structural characteristics of the AlScN/GaN heterostructure improve significantly by using bis-methylcyclopentadienyl-scandiumchloride ((MCp)2ScCl), which has a higher vapor pressure and allows for an increased molar flow and thus higher growth rate (GR). AlScN/GaN HEMT heterostructures with superior electrical characteristics deposited at different barrier growth temperatures are presented. The sheet resistance〈br〉of 172 Ω sq−1 obtained at 900 °C barrier growth temperature is among the lowest reported so far for AlScN/GaN HEMT structures. The sheet charge carrier density〈br〉is〈br〉and the electron mobility μ is 1124 cm2 Vs−1
Note:
Physica status solidi. Rapid research letters. - 17, 2 (2023) , 2200387, ISSN: 1862-6270
Language:
English
DOI:
10.1002/pssr.202200387
URN:
urn:nbn:de:bsz:25-freidok-2335749
URL:
https://doi.org/10.1002/pssr.202200387
URL:
https://nbn-resolving.org/urn:nbn:de:bsz:25-freidok-2335749
URL:
https://d-nb.info/1281413895/34