Format:
1 Online-Ressource (432 p)
Edition:
Reprint 2021
Edition:
[Online-Ausgabe]
ISBN:
9783112497968
Series Statement:
Physica status solidi Volume 89, Number 2
Content:
Frontmatter -- Classification Scheme -- Contents -- Original Papers -- Structure -- Mössbauer Study of the Reaction Kinetics of Hexagonal M-Phase Ferrites -- Dynamics of Solid Solution Formation in Cu-Ni Mixture under Plastic Flow at High Pressure -- Simulation of the Influence of Mechanical Stresses on the Kinetics of Crystallization of Ion-Implanted Silicon Layers under Pulse Heating -- Intermediate Smectic A-State at Nematic-Smectic C Phase Transition at Tilted Orientation -- Strain Field Observation and Lattice Stability at the Tip of Thermoelastic Cu-Zn-Al Martensite Plates -- Focus Dependence of the Black-White Contrast of Small Point Defect Clusters on Transmission Electron Microscope Images of Crystalline Specimens -- Etude de validité d'un modèle de réseau de précipités sphériques pour la description de la remise en solution des précipités 0 dans les alliages Al-Cu -- Departures from Stoichiometry of BiTeI Crystals Grown from the Vapour Phase -- Lattice properties -- Focusing of Nonlinear Ultrasonic Waves in Viscous Thermoelastie Materials with Spherical Inclusions -- Optical Properties of the Two Crystal Modifications of the Organic Conductor (BEDT-TTF)2I3 -- Defects, atomistic aspects -- On the Dose Dependence of the Formation of Z1 Centres in KCl:Ca -- Transmission Electron Microscopy Observations of Dislocations and Twins in Polycrystalline Zirconium -- Effect of Chlorine Implantation on Phosphorus Predeposition in Silicon -- The Size Distribution of Macroscopic Defects in Media Containing Gas Admixture -- Investigations of Hydrogen Implanted GaP Single Crystals by Means of Particle Induced y-Spectroscopy, Infrared Spectroscopy, and Rutherford Backscattering Channelling Technique -- Extended Defects in Deformed Rutile -- Magnetism -- Exchange and Dipolar Interactions in TbF3 -- Magnetic After-Effects in Nitrogen-Charged α-Fe Following Low-Temperature Electron- and Neutron-Irradiation -- A Quantitative Characterization of Magnetic Defects by Domain Nucleation -- Magnetic Ordering in the System Ca(Cu1-x Mnx)3Mn4O12 -- Localized electronic states and transitions -- Thermally Stimulated Exoelectron Emission and Spectra of Thermoluminescence in NaCl:Ca, Cu and NaCl:Cu Single Crystals -- Determination of the Electron Effective Mass and Relaxation Time in Heavily Doped Silicon -- Shallow Energy States in CdTe -- Analysis of Non-Exponential Filling in DLTS on p-n Junctions. Application to Dominant Traps in AlGaAs Lasers -- Electric transport -- Injection and Thermodepolarization Currents in GaS:Er Single Crystals -- Ionic Conduction in Rhodamine-Doped Polyester Polymer -- Minority Carrier Lifetimes in PbS0.1Se 0.9Determined from Diffusion Length by a Scanning Laser Microprobe -- Conductivity Instabilities and Polarization Effects of Bi12 (Ge, Si)O20 Single-Crystal Samples -- Photoconductivity of CdSxSe1-x with Controlled Deviation from Stoichiometry -- I - U Characteristics of Non-Crystalline As-Se-Cd Thin Films -- The Enhancement of Exclusion Effect in Compensated Semiconductors under the Action of Impurity Illumination Generating Minority Current Carriers -- Device-related phenomena -- On the Role of the Back Contact in DLTS Experiments with Schottky Diodes -- Influence of Humidity on Electrical Properties of a MOS Structure with an Ultrathin Dielectric Film -- Irradiation of MOS Transistors and Resulting Transport Processes in SiO2 -- Laser Annealing Effects on Electrochromic Properties of Amorphous Evaporated WO3 Films -- Short Notes -- Structure -- Preparation of Pb(Te, Se) Films by Simultaneous Evaporation of PbTe and Se -- XPS Studies of RuO2 Covered Titanium Oxides -- F.C.C. Solid Solutions in Al-Ge and Al-Si Alloys under High Pressure -- The Nature of the Intermediate Phase of PbZrO3 -- Lattice properties -- Comparison of the Elastic Behaviour of CuGe4P3 with that of CuGe2P3 -- Defects, atomistic aspects -- The Temperature Dependence of the Effective Threshold Energy for Atom Displacement in Tantalum -- Nitrogen Concentration in GaP:N Epitaxial Layers from Localized Mode Absorption Measurements -- Angular Distribution of Emitted X-Rays from an Ion-Implanted Layer -- Effect of Structure Transformation on the Transient Creep Characteristics of Zn-40 wt% A1 and Zn-0.5 wt% A1 Alloys -- Moiré Techniques by Means of Scanning Electron Microscopy -- Positron Annihilation at Defects in Surface Layers of Steel Irradiated by Supercurrent Ion Beams -- Magnetism -- Remanent Magnetization and Wall Coercivity of Continuous Films with Perpendicular Anisotropy -- Extended electronic states and transitions -- Optical Properties of Films of the PbTe-SnS System -- Localized electronic states and transitions -- ESR Studies on Doped Hydrogenated Amorphous Silicon-Carbon -- Influence of Hot Annealing and Cooling Rate on the Hall Effect and Piezoresistance in Transmutationally Doped and Ordinary Silicon Crystals -- Photo- and Electroluminescence of Neodymium in GaS -- A Method of Determination of the Trap Depth of Deep Centres by Capacitance Measurements -- Magnetic Hyperfine Interaction of 92mNb in ZrFe2 -- Electric transport -- Drift Mobility of Electrons in TlSbS2 -- Photovoltaic Effect in LiNbO3:Mg -- Thermally Stimulated Depolarization of TINO2 near the Glass Transformation -- Measurements of the Rectifying Barrier Height of Sputter Deposited Bi2Te3 Contacts on p-Silicon -- Device-related phenomena -- Energy Band Model of Ultrathin Solar Cells with Thickness up to 5 um -- Variation of Switching Time of Silicon p-n-p-n Structures Irradiated by Fast Electrons -- Influence of Electrode Material on the Electrical and Photoelectrical Properties of p-InP/AS2Se3 Heterostructures -- Pre-Printed Titles
Note:
Mode of access: Internet via World Wide Web.
,
In English
Additional Edition:
9783112497951
Additional Edition:
Erscheint auch als print 9783112497951
Language:
English
DOI:
10.1515/9783112497968
