UID:
almafu_9959327971502883
Format:
1 online resource (xix, 627 pages) :
,
illustrations
Edition:
Electronic reproduction. [Place of publication not identified] : HathiTrust Digital Library, 2010.
ISBN:
0471238457
,
9780471238454
,
047172291X
,
9780471722915
,
047166099X
,
9780471660996
Content:
"Insulated Gate Bipolar Transistors (IGBT): Theory and Design covers basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physics necessary for clearly understanding the subject matter."--Jacket.
Note:
Power Device Evolution and the Advent of IGBT -- IGBT Fundamentals and Status Review -- MOS Components of IGBT -- Bipolar Components of IGBT -- Physics and Modeling of IGBT -- Latchup of Parasitic Thyristor in IGBT -- Design Considerations of IGBT Unit Cell -- IGBT Process Design and Fabrication Technology -- Power IGBT Modules -- Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies -- IGBT Circuit Applications.
,
Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.
Additional Edition:
Print version: Khanna, Vinod Kumar, 1952- Insulated gate bipolar transistor (IGBT). Piscataway, NJ : IEEE Press ; Hoboken, NJ : Wiley-Interscience, ©2003 ISBN 0471238457
Language:
English
Keywords:
Electronic books.
;
Electronic books.
;
Electronic books.
URL:
https://onlinelibrary.wiley.com/doi/book/10.1002/047172291X
URL:
https://onlinelibrary.wiley.com/doi/book/10.1002/047172291X
URL:
https://onlinelibrary.wiley.com/doi/book/10.1002/047172291X
