UID:
almafu_9959328869302883
Format:
1 online resource (432 pages)
Edition:
1st
ISBN:
9781119247395
,
111924739X
,
9781119247487
,
1119247489
Note:
Intro -- Title Page -- Copyright Page -- Contents -- About the Editors -- List of Contributors -- Series Editor's Foreword -- Preface -- Acknowledgments -- Chapter 1 Introduction -- 1.1 History of Displays -- 1.2 Requirement for Displays -- 1.3 Transistor Technology for Displays -- 1.3.1 Comparison of Silicon and Oxide Semiconductors -- 1.3.2 FETs in LCDs -- 1.3.3 FETs in OLED Displays -- 1.3.4 Recent FET Technologies -- 1.3.5 Development of OLED Displays -- References -- Chapter 2 Applications of CAAC-IGZO FETs to Displays -- 2.1 Introduction -- 2.2 Bottom-Gate Top-Contact FET -- 2.2.1 Manufacturing Process for CAAC-IGZO FETs with C.E.-Type BGTC Structure -- 2.2.2 GI Formation -- 2.2.3 Formation of Buried Channel by Stacked Active Layer -- 2.2.4 Baking Treatment of CAAC-IGZO -- 2.2.5 Damaged Layer (n-Type) Formed by Deposition of S/D Electrodes -- 2.2.6 Cleaning of the Back Channel -- 2.2.7 Copper Wiring for S/D Electrodes -- 2.3 Top-Gate Self-Aligned FET -- 2.3.1 Fabrication Process of TGSA CAAC-IGZO FETs -- 2.3.2 Formation of GE/GI Patterns -- 2.3.3 Formation of S/D Regions -- 2.3.4 GI Thinning and L Reduction -- 2.4 Characteristics of CAAC-IGZO FET -- 2.4.1 Current Drivability -- 2.4.2 Low Off-State Current -- 2.4.3 Normally-Off Id-Vg Characteristics and Small Threshold-Voltage Variation -- 2.4.4 Saturability of Id-Vd Characteristics -- 2.4.5 Summary -- 2.5 Density of States and Device Reliability -- 2.5.1 Introduction -- 2.5.2 Measurement of Defect States in IGZO Film -- 2.5.3 Correlation between Oxygen Vacancies and FET Characteristics -- 2.5.4 Defect States in Silicon-Oxide Film -- 2.5.5 NBITS Mechanism -- 2.5.6 Summary -- 2.6 Oxide Conductor Electrode Process -- 2.6.1 Introduction -- 2.6.2 Method of Fabricating Oxide Conductor Electrode and Measurements of its Resistivity -- 2.6.3 LCD Device with Oxide Conductor Electrode -- 2.6.4 Summary.
,
6.2 Technology for Higher Resolution -- 6.2.1 Introduction -- 6.2.2 The Pixel Circuit -- 6.2.3 Pixel Layout and Aperture Ratio of an LCD -- 6.2.4 Applicability of Large-Sized Displays -- 6.3 Driving Method for Power Saving -- 6.3.1 Introduction -- 6.3.2 Saving Power with Low-Frequency Driving -- 6.3.3 Low-Frequency Driving with CAAC-IGZO -- 6.3.4 Configuration of a Liquid Crystal Cell for Low-Frequency Driving -- 6.3.5 Conclusions -- 6.4 Characteristics of LCDs -- 6.4.1 Introduction -- 6.4.2 High-Resolution Fringe-Field Switching LCDs -- 6.4.3 A 434-PPI Reflective LCD -- References -- Appendix -- Unit Prefixes -- Index -- Supplemental Images -- EULA.
Additional Edition:
Print version: Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO. [United Kingdom] : Wiley, 2016 ISBN 9781119247340
Additional Edition:
ISBN 1119247349
Language:
English
Keywords:
Electronic books.
;
Electronic books.
;
Electronic books.
URL:
https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395
URL:
https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395
URL:
https://onlinelibrary.wiley.com/doi/book/10.1002/9781119247395
