UID:
almahu_9948025234002882
Format:
1 online resource (599 p.)
Edition:
2nd ed.
ISBN:
1-281-05711-8
,
9786611057114
,
0-08-053818-5
Content:
This book describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices.Key Features*
Note:
Description based upon print version of record.
,
Cover; Contents; Preface to the First Edition; Preface to the Second Edition; Glossary of Acronyms Used in Text; Notation for Organometallic Precursor Molecules; Chapter 1. Overview of the OMVPE Process; 1.1 Introduction; 1.2 Comparison of Epitaxial Techniques; 1.3 Overview of the OMVPE Growth Process; References; Chapter 2. Thermodynamics; 2.1 Basic Thermodynamics of Phase Equilibrium; 2.2 Phase Diagrams; 2.3 Thermodynamic Driving Force for Epitaxial Growth; 2.4 Solid Composition; 2.5 Quaternary Systems; 2.6 Thermodynamics of the Surface; References
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Chapter 3. Physical Processes Occurring on the Surface3.1 Introduction; 3.2 Surface Measurement Techniques; 3.3 Direct Observation of Surface Features; 3.4 Atomic-Level Growth Processes; 3.5 Effects of Surface Processes on OMVPE Growth; References; Chapter 4. Source Molecules; 4.1 Introduction; 4.2 Group II Molecules; 4.3 Group III Molecules; 4.4 Group V Sources; 4.5 Group VI Precursor Molecules; 4.6 Organometallic Dopant Precursors; References; Chapter 5. Kinetics; 5.1 Background; 5.2 OMVPE Growth Process; 5.3 Homogeneous Pyrolysis Reactions; 5.4 Heterogeneous Pyrolysis Reactions
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5.5 OrderingReferences; Chapter 6. Hydrodynamics and Mass Transport; 6.1 Introduction; 6.2 Complete Hydrodynamic Treatment of OMVPE; 6.3 Boundary-Layer Model; 6.4 Approximate Analytical Approach for Horizontal OMVPE Reactors; 6.5 Application to Reactor Design; References; Chapter 7. Design of the OMVPE Process; 7.1 Consolidated OMVPE Growth Model; 7.2 Kinetically Limited Growth; 7.3 Midtemperature, All Pressures; 7.4 High-Temperature Regime; 7.5 OMVPE Growth of II/VI Compounds; 7.6 Design of the Overall Process; References; Chapter 8. Specific Materials; 8.1 GaAs; 8.2 AlGaAs
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8.3 GaInAs, AlInAs, and AlGaInAs8.4 InP; 8.5 GaP, GaInP, and AlGaInP; 8.6 As/P Alloys; 8.7 Antimony Compounds and Alloys; 8.8 III/V Nitrides, AlGaInN; 8.9 Selective Growth of III/V Semiconductors; 8.10 II/VI Semiconductors; 8.11 Group IV Semiconductors; 8.12 Nonsemiconductor Materials; References; Chapter 9. Superlattice Structures; 9.1 AlGaAs/GaAs; 9.2 GaInAs/InP; 9.3 AlGaInP/GaInP; 9.4 GaInAs/GaAs; 9.5 AlGaInN; 9.6 Strain-Layer Superlattices; 9.7 GaAs on Si Substrates; 9.8 SiGe Alloys; 9.9 II/VI Compounds; 9.10 Doping Superlattices; 9.11 Atomic-Layer Epitaxy (ALE); References
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Chapter 10. Devices10.1 Injection Lasers and LEDS; 10.2 Photodiodes; 10.3 Electronic Switching Devices; 10.4 Solar Cells; 10.5 Summary; References; Index
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English
Additional Edition:
ISBN 0-12-673842-4
Language:
English
