UID:
almahu_9948025659702882
Umfang:
1 online resource (795 p.)
ISBN:
1-59124-095-6
Serie:
Materials science and process technology series
Inhalt:
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE ha
Anmerkung:
Description based upon print version of record.
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Front Cover; Molecular Beam Epitaxy: Applications to Key Materials; Copyright Page; Contents; Chapter 1. The Technology and Design of Molecular Beam Epitaxy Systems; 1.0 INTRODUCTION; 2.0 MOLECULAR BEAM EPITAXY; 3.0 MBE SYSTEM DEVELOPMENT; 4.0 VACUUM; 5.0 MBE COMPONENTS: SOURCES; 6.0 MBE COMPONENTS: SHUTTERS AND BEAM INTERRUPTORS; 7.0 MBE COMPONENTS: SUBSTRATE HEATER DESIGNS; 8.0 TEMPERATURE MEASUREMENT AND CONTROL; 9.0 FLUX MONITORING TECHNIQUES; 10.0 PREPARATION, DIAGNOSTICS AND ANALYSIS; 11.0 MBE SYSTEM DESIGN: RETROSPECT AND PROSPECT; 12.0 PROCESS AND SYSTEM AUTOMATION; REFERENCES
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Chapter 2. Molecular Beam Epitaxy of High-Quality GaAs and AIGaAs1.0 INTRODUCTION; 2.0 THE DEVELOPMENT OF HIGH PURITY MBE TECHNOLOGY; 3.0 GROWTH PROCESSES; 4.0 SUBSTRATE ORIENTATION; 5.0 OVAL DEFECTS; 6.0 SURFACE MORPHOLOGY AND INTERFACE ROUGHNESS; 7.0 SUBSTRATE CLEANING AND MBE GROWTH: IMPURITY AND DEFECT INCORPORATION; 8.0 ISOELECTRONIC AND UNINCORPORATED DOPANTS; 9.0 SURFACE PRESERVATION; 10.0 PREPARATION OF AN MBE SYSTEM FOR THE GROWTH OF HIGH PURITY III/V SEMICONDUCTORS; 11.0 CHARACTERIZATION TECHNIQUES FOR EPITAXIAL SEMICONDUCTOR LAYERS; 12.0 IMPURITY ENERGY LEVELS IN GaAs AND AIGaAs
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ACKNOWLEDGMENTSREFERENCES; Chpater 3. Gas-Source Molecular Beam Epitaxy: Gaxln1-xAS1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties; 1.0 INTRODUCTION; 2.0 CHEMISTRY; 3.0 GROUP V GAS SOURCES; 4.0 THE MBE AND GAS HANDLING SYSTEMS; 5.0 PROCEDURES; 6.0 SINGLE BULK LAYERS; 7.0 QUANTUM WELL AND SUPERLATTICE STUDIES; ACKNOWLEDGMENTS; Chapter 4. Molecular Beam Epitaxy of Wide Gap II-VI Semiconductor Heterostructures; 1.0 GENERAL INTRODUCTION; 2.0 CdTe-BASED HETEROSTRUCTURES; 3.0 ZnSe-BASED HETEROSTRUCTURES; 4.0 SUMMARY; ACKNOWLEDGMENT; REFERENCES
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Chapter 5. Elemental Semiconductor Heterostructures-Growth, Properties, and Applications1.0 INTRODUCTION; 2.0 GROWTH OF Si1-xGex ALLOYS; 3.0 STABILITY OF Si1-xGex FILMS; 4.0 LONG RANGE ORDER IN THE Si1-xGex SYSTEM; 5.0 DEVICE APPLICATIONS OF Si1-xGex ALLOYS; 6.0 CONCLUSIONS; ACKNOWLEDGEMENTS; REFERENCES; Chapter 6. MBE Growth of High Tc Superconductors; 1.0 INTRODUCTION; 2.0 OXIDE MBE SYSTEMS; 3.0 SPECIFIC HIGH Tc MATERIALS AND DEMONSTRATED SYNTHESIS CAPABILITIES; 4.0 FUTURE DIRECTIONS; 5.0 CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES
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Chapter 7. MBE Growth of Artificially-Layered Magnetic Metal Structures1.0 INTRODUCTION; 2.0 SEEDED EPITAXY OF MAGNETIC METALS; 3.0 STRUCTURAL AND MAGNETIC PROPERTIES OF ARTIFICIALLY-LAYERED MAGNETIC METAL STRUCTURES; 4.0 CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 8. Reflection High Energy Electron Diffraction Studies o f the Dynamics of Molecular Beam Epitaxy; 1.0 INTRODUCTION; 2.0 DIFFRACTION GEOMETRY; 3.0 DIFFRACTION FUNDAMENTALS; 4.0 DIFFRACTION MEASUREMENTS; 5.0 SIMPLE GROWTH MODELS; 6.0 CONCLUSION; ACKNOWLEDGMENTS; APPENDIX: TWO-LEVEL DIFFRACTION; REFERENCES; Index
Weitere Ausg.:
ISBN 0-8155-1371-2
Sprache:
Englisch
