UID:
almahu_9948026228002882
Format:
1 online resource (435 p.)
Edition:
1st ed.
ISBN:
1-281-05974-9
,
9786611059743
,
0-08-052612-8
Content:
The aim of this book is to provide a timely collection that highlights advances in current research of crystal growth ranging from fundamental aspects to current applications involving a wide range of materials. This book is published on the basis of lecture texts of the 11th International Summer School on Crystal Growth (ISSCG-11) to be held at Doshisha Retreat Center in Shiga Prefecture Japan, on July 24-29, 2001. This school is always associated with the International Conference of Crystal Growth (ICCG) series that have been held every three years since 1973; thus this school continues the
Note:
Description based upon print version of record.
,
Front Cover; Advances in Crystal Growth Research; Copyright Page; Contents; Preface; Acknowledgements; Chapter 1. Crystal growth-Its significance for modern science and technology and its possible future applications; 1. Introduction; 2. Morphology and crystal growth; 3. Synthesis of single crystals; 4. Surface and interface; 5. Lattice defects; 6. Synthesis of dislocation-free crystals; 7. Vapor growth and epitaxy; 8. Computer simulation; 9. Biomineralization and biocrystallization; 10. Concluding remarks (future targets); Part 1: Understanding of Fundamental Aspects in Crystal Growth
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Chapter 2. Fundamentals of phase field theory1. Introduction; 2. Monocomponent system; 3. Anisotropy; 4. Alloys; 5. Hydrodynamics; 6. Conclusions; Chapter 3. Generic mechanism of heterogeneous nucleation and molecular interfacial effect; 1. Introduction; 2. Nucleation barrier; 3. Nucleation kinetics; 4. Interfacial effects of foreign body and fluid molecules; 5. Heterogeneous two-dimensional nucleation growth; 6. General remarks and conclusions; Chapter 4. Challenges in crystal growth science and the microgravity tool; 1. Opportunities; 2. What is missing in crystal growth science?
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3. Surface processes vs. bulk diffusion and convection. Dendrites4. Pattern formation; 5. Ripening; 6. Detached growth; 7. Biomacromolecular crystallization; 8. Conclusion; Chapter 5. Surface step dynamics: basic concepts, theory and simulation; 1. Basic idea of step models; 2. Step dynamics in a vicinal face; 3. Relaxation of mesoscopic structures; Chapter 6. Surface step dynamics: experimental observations; 1. Introduction; 2. Experimental; 3. Equilibrium shape (macroscopic approach); 4. Thermal fluctuation of steps (microscopic approach); 5. Mechanism of mass transport for step fluctuation
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6. ConclusionChapter 7.Elementary growth process in semiconductor epitaxy-Molecular beam epitaxy as an example of epitaxy; 1. Introduction; 2. Incorporation diffusion length; 3. Intersurface diffusion; 4. Elementary growth processes; 5. Fabrication of microstructures; 6. Microchannel epitaxy by low angle incidence beam MBE; 7. Elimination of the growth on (111) facet adjacent to (001) facet; 8. Conclusions; Chapter 8. Atomistic simulation of epitaxial growth processes; 1. Introduction; 2. Computational methods; 3. Role of electrons on the surface; 4. Epitaxial growth simulation; 5. Summary
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Part 2: Materials Design and Functionality of Advanced MaterialsChapter 9. Si bulk crystal growth: what and how?; 1. Introduction; 2. Magnetic field-applied crystal growth; 3. Actual system; 4. Summary; Chapter 10. Optimization of melt growth processes by experimental analysis and computer modeling; 1. Introduction; 2. Strategy of process optimization in crystal growth; 3. Important features of industrial melt growth processes; 4. Physico-chemical model; 5. Numerical treatment; 6. Verification of numerical models by model experiments; 7. Process optimization; 8. Conclusion
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Chapter 11. Epitaxial lateral overgrowth of GaN
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English
Additional Edition:
ISBN 0-444-50747-7
Language:
English
