UID:
almahu_9948026597002882
Format:
1 online resource (434 p.)
ISBN:
1-281-05488-7
,
9786611054885
,
0-08-054292-1
Series Statement:
Thin films ; v. 26
Content:
GENERAL DESCRIPTION OF THE SERIESPhysics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems.In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical as well as te
Note:
Description based upon print version of record.
,
Cover; Contents; Preface; Useful Conversion Factors and Constants; Chapter 1. Introduction; 1.1 The Role of PVD in Microelectronics; 1.2 PVD and the Interconnect Roadmap; 1.3 Additional Sources of Information on PVD; References; Chapter 2. Physics of Sputtering; 2.1 Sputtering; 2.2 Energy and Angular Distributions of Sputtered Atoms; 2.3 Other Energetic Processes During Sputtering; 2.4 Transport of Sputtered Atoms; References; Chapter 3. Plasma Systems; 3.1 Diode Plasmas; 3.2 Plasma Potential; 3.3 Floating Potential; 3.4 Flux to the Sheath; 3.5 DC and RF Plasmas; 3.6 RF Plasmas
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3.7 RF Matchboxes3.8 Magnetic Fields; 3.9 Reactive Sputter Deposition; 3.10 Practical Plasma Issues in PVD Tools; 3.11 Plasma Diagnostics and Optical Emission Magnetrons; References; Chapter 4. The Planar Magnetron; 4.1 The DC Magnetron; 4.2 The Planar Magnetron; 4.3 The Swept-Filed Magnetron; 4.4 Source Arcing; 4.5 Low Pressure Sputtering; References; Chapter 5. Sputtering Tools; 5.1 Evolution of PVD Tools for Microelectronics; 5.2 Generic PVD Cluster Tool; 5.3 The Technology of PVD Cluster Tools; 5.4 300 mm PVD; 5.5 PVD Process Mapping; 5.6 Cost-of-Ownership (CoO); References
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Chapter 6. Directional Deposition6.1 Damascene Processing; 6.2 Long Throw Deposition Techniques; 6.3 Collimated Sputter Deposition; References; Chapter 7. Planarized PVD: Use of Elevated Temperature and/or High Pressure; 7.1 Physics of Hot PVD; 7.2 Elevated Temperature PVD Al; 7.3 Elevated Temperature PVD Cu; 7.4 Application of High Pressure; 7.5 Conclusions; References; Chapter 8. Ionized Magnetron Sputter Deposition: I-PVD; 8.1 Experimental Systems; 8.2 Plasma Aspects; 8.3 Deposition and Experimental Results; 8.4 Lining Trenches and Vias; 8.5 Trench and Via Filling
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8.6 Electrical Measurements8.7 Materials Properties; References; Chapter 9. PVD Materials and Processes; 9.1 Introduction; 9.2 Metrology; 9.3 Al Alloys; 9.4 Titanium; 9.5 Titanium Nitride; 9.6 Titanium-Tungsten (Ti-W) Alloys; 9.7 Refractory Metal Silicides; 9.8 Copper; 9.9 PVD and CVD; 9.10 Upper Lever Metallization; References; Chapter 10. Process Modeling for Magnetron Deposition; 10.1 Cathode Surface Models; 10.2 Transport Modeling; 10.3 The Water Surface; 10.4 Conclusion; References; Chapter 11. Sputtering Targets; 11.1 Target Fabrication; 11.2 Target Cooling; 11.3 Target Burn-In
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11.4 Target Composition11.5 Target Purity; 11.6 Target Utilization; 11.7 Microstructural Engineering; 11.8 Particle Generation; References; Index
,
English
Additional Edition:
ISBN 0-12-533026-X
Language:
English
