UID:
almahu_9948321022702882
Format:
xiii, 687 p. :
,
ill.
Edition:
Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
Series Statement:
The Cambridge RF and microwave engineering series
Content:
"Whether you are an RF transistor designer, an amplifier designer or a system designer, this is your one-stop guide to RF and microwave transistor power amplifiers. A team of expert authors brings you up to speed on every topic, including: devices (Si LDMOS and VDMOS, GaAs FETs, GaN HEMTs), circuit and amplifier design (discrete, hybrid and monolithic), CAD, thermal design, reliability, and system applications/requirements for RF and microwave transistor amplifiers. Covering state-of-the-art developments and emphasising practical communications applications, this is the complete professional reference on the subject"--
Note:
Machine generated contents note: 1. Silicon LDMOS and VDMOS transistors: physics, design and technology Wayne Burger and Chris Dragon; 2. GaAs FETs: physics, design and models Rob Davis; 3. Wide band gap transistors - SiC and GaN: physics, design and models Bob Trew; 4. Amplifier classes, A to S Steve Cripps; 5. Computer-aided design of power amplifiers Steve Maas; 6. Practical HF/VHF/UHF RF power amplifier realization Dan Myer; 7. Microwave hybrid amplifier realization Dominic Fitzpatrick; 8. Monolithic power amplifiers Inder Bahl; 9. RF power amplifier thermal design Mali Mahalingam; 10. Reliability Bill Roesch; 11. Power amplifier applications Mustafa Akkul and Wolfgang Bösch; 12. Amplifier measurements Michael Hiebel.
Language:
English
Keywords:
Electronic books.
