UID:
almahu_9949198875602882
Format:
XII, 388 p.
,
online resource.
Edition:
1st ed. 2004.
ISBN:
9783662070666
Series Statement:
NanoScience and Technology,
Content:
The main focus of the book are the physical mechanisms behind the spontaneous formation of ordered nanostructures at semiconductor surfaces. These mechanisms are at the root of recent breakthroughs in advanced nanotechnology of quantum-wire and quantum-dot fabrication. Generic theoretical models are presented addressing formation of all basic types of nanostructures, including periodically faceted surfaces, arrays of step-bunches of equal heights and single- and multi-sheet arrays of both 2- and 3-D strained islands. Decisive experiments on both structural and optical characterization of nanostructures are discussed to verify theoretical models and link them to practical examples. The book also describes experimental tools in nanoengineering that enable one to intentionally control the parameters of self-organized nanostructures, such as chemical composition, shape, size, density and relative arrangement of quantum dots and wires. Practical applications of nanoepitaxial technologies are discussed in the framework of recent advances in quantum dot lasers.
Note:
1. Introduction -- 2. Growth and Characterization Techniques -- 3. Self-Organization Phenomena at Crystal Surfaces -- 4. Engineering of Complex Nanostructures: Working Together with Nature -- 5. Devices Based on Epitaxial Nanostructures -- 6. Conclusion -- A. Energy of a Strained Disk with Perturbed Shape -- A.1 Energy of the Disk Boundary -- A.2 Elastic Relaxation Energy of the Disk -- A.3 Evaluation of Integrals -- A.4 Stiffness of the Disk against Shape Perturbations -- B. Elastic Interaction of Two Strained Disks -- C. Stiffness of a Hexagonal Array of Interacting Strained Disks -- References.
In:
Springer Nature eBook
Additional Edition:
Printed edition: ISBN 9783642087356
Additional Edition:
Printed edition: ISBN 9783540678175
Additional Edition:
Printed edition: ISBN 9783662070673
Language:
English
DOI:
10.1007/978-3-662-07066-6
URL:
https://doi.org/10.1007/978-3-662-07066-6