UID:
almahu_9949460318902882
Format:
1 online resource (257 p.)
ISBN:
3-86219-365-9
Note:
Description based upon print version of record.
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Dissertation--Kassel Univ., 2012.
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""Front cover ""; ""Title page ""; ""Imprint ""; ""Aknowledgments""; ""Index of Contents""; ""List of Figures""; ""List of Tables""; ""List of Symbols""; ""List of Abbreviations and Acronyms""; ""Abstract""; ""Zusammenfassung""; "" Chapter 1""; ""Introduction""; ""1.1 Elements of the UMTS Technology""; ""1.2 Transistors with Wide-Bandgap Semiconductors for UMTS""; ""1.3 Transistor Modeling for Power Amplifier Design""; ""1.3.1 Proposed Type of Modeling""; ""1.3.2 Challenges of Modeling Transistors of Wide-Bandgap Semiconductors""
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""1.3.3 Challenges of Modeling Advanced Large-Size Transistors for High-Power Amplifiers""""1.4 Main Objectives of the Research Work""; ""1.5 Outline of the Thesis""; ""Chapter 2""; ""GaN HEMTs for UMTS Power Amplifiers""; ""2.1 GaN HEMTs Compared with Devices of Other Semiconductors for UMTS Power Amplifiers""; ""2.1.1 GaN Compared with GaAs, Si and SiC""; ""2.1.2 GaN Compared with SiC""; ""2.1.3 GaN HEMTs Compared with LDMOS FETs of Si""; ""2.2 Physical Structure and Operation of AlGaN/GaN HEMTs""; ""2.2.1 Basic Layer Structure and Band Diagram""; ""2.2.2 Formation of the 2DEG""
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""2.2.3 Functional Description of Advanced Layer Structures""""2.3 Drawbacks of GaN HEMTs and Modeling Challenges""; ""2.3.1 Charge-Trapping Induced Dispersion""; ""2.3.2 Parasitic Effects of GaN Devices""; ""2.3.3 Self-Heating Effects on GaN Devices""; ""Chapter 3""; ""Device Characterization for Modeling""; ""3.1 Manufacturers and Technology of the Studied Devices""; ""3.2 Data Acquisition for Modeling""; ""3.2.1 Static-DC IV Measurements""; ""3.2.2 S-Parameter Measurements""; ""3.2.3 Pulsed-DC Measurements""; ""3.3 Large-Signal Characterization for Model Verification3.3.1""
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""3.3.1 Description""""3.3.2 Measurement Setups""; ""Chapter 4""; ""Proposed Strategy for Small-Signal Modeling""; ""4.1 Small-Signal Electrical Equivalent Circuit""; ""4.1.1 Physical Meaning of the Circuit Elements""; ""4.1.2 Physical Meaning of the Extrinsic CapacitanceParameters""; ""4.2 Extrinsic Parameter Extraction""; ""4.2.1 Analysis of the Generation of Capacitance Ratio Values in the TECR Algorithm""; ""4.2.2 Proposed Generation of Capacitance Ratio Values""; ""4.2.3 Equation System of Capacitance Parameters in Pinch-Off""; ""4.2.4 Sweeps of Values on Capacitance Parameters""
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""4.2.5 Extraction of Extrinsic Resistance Parameters""""4.3 Intrinsic Parameter Extraction""; ""4.4 Scalability of the Small-Signal Model""; ""4.4.1 Scaling Rules in Terms of the Gate Electrode Width""; ""4.4.2 Scaling Rules in Terms of the Gate Electrode Number""; ""Chapter 5""; ""Results of Small-Signal Modeling""; ""5.1 Results of Extrinsic Parameter Extraction""; ""5.1.1 Optimal Frequency Range of the Extraction""; ""5.1.2 Starting and Optimized Values of the Extrinsic Parameters""; ""5.2 Results of Intrinsic Parameter Extraction""
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""5.2.1 Frequency and Bias Dependency of Intrinsic Parameters""
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English
Additional Edition:
ISBN 3-86219-364-0
Language:
English
