UID:
almahu_9949697809102882
Format:
1 online resource (429 p.)
Edition:
3rd ed.
ISBN:
1-281-07301-6
,
9786611073015
,
0-08-053228-4
Content:
The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Note:
Description based upon print version of record.
,
Front Cover; Gallium Arsenide Electronic Materials and Devices: A Market and Technology Overview 1999-2004; Copyright Page; Contents; List of Tables; List of Figures; Chapter 1. Introduction; 1.1 Report Structure; 1.2 Products; 1.3 Markets; 1.4 Regions; 1.5 Research Background; Chapter 2. Executive Summary; 2.1 Introduction; 2.2 Materials Properties; 2.3 The GaAs Marketplace; 2.4 Market Evaluation and Forecast; 2.5 The Supplier Situation; 2.6 Conclusions; Chapter 3. Substrate Markets; 3.1 Introduction; 3.2 Worldwide Market for SI GaAs Substrates 1999-2004; 3.3 The SI GaAs Substrate Business
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3.4 Market ShareChapter 4. Merchant GaAs Epitaxial Wafer Markets; 4.1 Introduction; 4.2 Epiwafer Industry Overview; 4.3 Epiwafer Market Analysis and Forecast; 4.4 Epiwafer Markets by Epitaxial Growth Technique; 4.5 Epitaxial Wafer Markets by Substrate Type; 4.6 Epitaxial Wafer Markets by Geographic Region; 4.7 Epitaxial Wafer Markets by Application; 4.8 Epiwafer Pricing Trends; 4.9 MBE Epiwafer Suppliers; 4.10 MOVPE Epiwafer Suppliers; 4.11 Silicon-Germanium Epiwafer Markets; Chapter 5. Application Market Overview; 5.1 Introduction; 5.2 Worldwide Market for GaAs Devices
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5.3 The Worldwide GaAs Electronics Business5.4 Merchant vs. Captive Markets for GaAs Devices; 5.5 Market by Geographical Region; 5.6 Telecommunications Markets for GaAs Electronic Devices; 5.7 Wireless Data Communications; 5.8 Consumer Markets for GaAs Electronic Devices; 5.9 Computer Markets for GaAs Electronic Devices; 5.10 Industrial Markets for GaAs Electronic Devices; 5.11 Military/Aerospace Markets for GaAs Electronic Devices; 5.12 Automotive Markets for GaAs Electronic Devices; 5.13 Other Markets for GaAs Electronic Devices; Chapter 6. Gallium Arsenide Crystal Growth; 6.1 Introduction
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6.2 Crystal Growth6.3 Crystal Growth Technologies; 6.4 Substrates; Chapter 7. Epitaxy and Device Processing of Gallium Arsenide; 7.1 Epitaxial Growth; 7.2 MOVPE; 7.3 Epitaxial Precursor Materials; 7.4 Commercial MOVPE Reactors; 7.5 MBE; 7.6 MBE Growth of Other Semiconductors; 7.7 UHV-CVD of SiGe; 7.8 In situ Monitoring; 7.9 Alternative Fabrication Processes; 7.10 Ion Implantation; 7.11 Device Processing; Chapter 8. Company Profiles; 8.1 Agilent Technologies Inc; 8.2 AIXTRON AG; 8.3 Alpha Industries Inc; 8.4 ANADIGICS Inc; 8.5 Apex Co Ltd; 8.6 Applied Epi Inc; 8.7 Atmel Corp
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8.8 ATRAMET (Atomergic Chemetals Corp)8.9 AWSC (Advanced Wireless Semiconductor Co); 8.10 AXT (American Xtal Technology); 8.11 Caswell Technology; 8.12 Celeritek Inc; 8.13 CMK Ltd; 8.14 Conexant Systems Inc; 8.15 Dowa Mining Co Ltd; 8.16 EMCORE Corp; 8.17 Endwave Corp; 8.18 Epichem Ltd; 8.19 Epitronics Corp; 8.20 Filtronic Solid State; 8.21 Freiberger Compound Materials GmbH; 8.22 Fujitsu Quantum Devices Ltd; 8.23 Furukawa Electric Ltd; 8.24 GCS; 8.25 GIGA A/S; 8.26 Hexawave Inc; 8.27 Hitachi Cable Ltd; 8.28 Hitachi Ltd; 8.29 Hittite Microwave Corp; 8.30 Honeywell Technology Center
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8.31 Infineon Technologies AG
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English
Additional Edition:
ISBN 1-85617-364-X
Language:
English
