Umfang:
XIII, 263 S. :
,
Ill., graph. Darst. ;
,
235 mm x 155 mm.
ISBN:
3-540-23674-0
,
978-3-540-23674-0
Inhalt:
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification topics, such as ion-beam mixing, stresses, and sputtering, are also described. TOC:General Features and Fundamental Concepts.- Particle Interactions and Interatomic Potentials.- Dynamics of Binary Elastic Collisions.- Ion-Solid Scattering Events: Cross-Section.- Collisions with Atoms and Electrons: Ion Stopping.- Ion Range and Range Distributions.- Displacements during Implantation: Radiation Damage.- Influence of Crystal Structure on Range: Channeling.- Doping, Diffusion and Defects in Ion Implanted Si.- Amorphous SE Thermal Regrowth, Ion Induced Epitaxy and Laser Annealing.- S1 Slicing and Layer Transfer: Ion-Cut.- Surface Erosion during Implantation: Sputtering.- Ion Induced Atomic Intermixing at the Interface: Ion Beam Mixing.- Ion Implantation Technology
Sprache:
Englisch
Fachgebiete:
Physik
Schlagwort(e):
Ionenimplantation
URL:
http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014918706&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
Mehr zum Autor:
Mayer, James W., 1930-2013.
Mehr zum Autor:
Nastasi, Michael, 1950-
