UID:
edocfu_9959145903302883
Format:
1 electronic resource (XI, 230 pages)
ISBN:
1000021579
Series Statement:
Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik.
Content:
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Note:
English
Additional Edition:
ISBN 3-86644-615-2
Language:
English
