Umfang:
1 Online-Ressource(XX, 535 p. 322 illus., 145 illus. in color.)
Ausgabe:
2nd ed. 2020.
ISBN:
9783030438692
Serie:
Graduate Texts in Physics
Inhalt:
Introduction -- Structural Properties of Heterostructures -- Electronic Properties of Heterostructures -- Thermodynamics of Epitaxial Layer-Growth -- Atomistic Aspects of Epitaxial Layer-Growth -- In situ Growth Monitoring -- Application of Surfactants -- Doping, Diffusion, and Contacts -- Methods of Epitaxy -- Special Growth Techniques.
Inhalt:
The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations.
Weitere Ausg.:
ISBN 9783030438685
Weitere Ausg.:
ISBN 9783030438708
Weitere Ausg.:
ISBN 9783030438715
Weitere Ausg.:
Erscheint auch als Druck-Ausgabe Pohl, Udo W., 19XX - Epitaxy of semiconductors Cham : Springer, 2020 ISBN 9783030438685
Weitere Ausg.:
Erscheint auch als Druck-Ausgabe ISBN 9783030438708
Weitere Ausg.:
Erscheint auch als Druck-Ausgabe ISBN 9783030438715
Sprache:
Englisch
Schlagwort(e):
Halbleiter
;
Heterostruktur
;
Epitaxie
DOI:
10.1007/978-3-030-43869-2
