ISSN:
1662-9752
Content:
Hysteresis response of epitaxially grown graphene nanoribbons devices on semi-insulating 4H-SiC in the armchair and zigzag directions is evaluated and studied. The influence of the orientation of fabrication and dimensions of graphene nanoribbons on the hysteresis effect reveals the metallic and semiconducting nature graphene nanoribbons. The hysteresis response of armchair based graphene nanoribbon side gate and top gated devices implies the influence of gate field electric strength and the contribution of surface traps, adsorbents, and initial defects on graphene as the primary sources of hysteresis. Additionally, passivation with AlOx and top gate modulation decreased the hysteresis and improved the current-voltage characteristics.
In:
Materials science forum, Baech : Trans Tech Publications Ltd., 1984, 1089(2023), Seite 15-22, 1662-9752
In:
volume:1089
In:
year:2023
In:
pages:15-22
Language:
English
URL:
Volltext
(lizenzpflichtig)
Author information:
Stauffenberg, Jaqueline 1994-
Author information:
Hähnlein, Bernd 1983-
Author information:
Pezoldt, Jörg
Author information:
Jacobs, Heiko O. 1970-